Posted by Marc Greenberg on April 10, 2015
Faster than most people expected, LPDDR4 is here and shipping in two products!
LG launched the LG Gflex2 Phone powered by the Qualcomm Snapdragon S810 processor with LPDDR4 DRAM in Korea earlier this year, followed by a global rollout in February and March.
Samsung made a big event of the launch of the Galaxy S6 today (April 10th, 2015) making the S6 and S6 Edge available at multiple US and international retailers simultaneously. The Galaxy S6 is based around Samsung’s own Exynos 7420 application processor and LPDDR4 DRAM.
Both appear to be using dual-die or quad-die LPDDR4 packages in a “2×32” (two 32-bit channels) configuration – one of the configurations I have been suggesting in my webinar on LPDDR4, “What the LPDDR4 Multi-Channel Architecture Can Do for You”.
For those interested in memory, this is way ahead of the curve. I had predicted (in an internal email to my colleagues dated September 2013) that the first LPDDR4 product would be something called a Samsung Galaxy S6 in September 2015. At the time, I think people thought I was a bit too aggressive with that prediction. I repeated that prediction right around the time of this blog entry last year. Graham commented how fast the LPDDR4 standard had been published in comparison to other JEDEC DRAM standards last year. It turns out that my prediction of the first shipping product in September 2015 was not aggressive enough – it’s April and we have two!
Congratulations to LG and Samsung for getting these products out, there must have been many technical hurdles to pass in achieving this impressive technical achievement.
Anyone want to take bets on the first LPDDR5 product…?
Graham Allan is the Sr. Product Marketing Manager for DDR PHYs at Synopsys. Graham graduated from Carleton University's Electrical Engineering program with a passion for electronics that landed him in the field of DRAM design at Mosaid in Ottawa, Canada. Beginning at the 64Kb capacity, Graham worked on DRAM designs through to the 256Mb generation. Starting in 1992, Graham was a key contributor to the JEDEC standards for SDRAM, DDR SDRAM and DDR3 SDRAM. Graham holds over 20 patents in the field of DRAM and memory design.