Posted by Marc Greenberg on January 7, 2014
Last week I blogged on how Samsung and SK Hynix had both issued LPDDR4 press releases on the same day.
I just read the transcript of tonight’s Micron earnings call (Jan 7th, 2014), and within it, Micron’s President Mark Adams is quoted as saying, “We are also the first supplier to sample low-power DDR4 to our customers and chipset partners.” (Source: http://seekingalpha.com/article/1933411-micron-technologys-ceo-discusses-f1q-2014-results-earnings-call-transcript?page=5 )
So now we have three claims:
Samsung: “…developed the industry’s first eight gigabit (Gb), low power double data rate 4 (LPDDR4), mobile DRAM…” (Source: Samsung Press Release )
SK Hynix: “…developed the world’s first 8Gb(Gigabit) LPDDR4(Low Power DDR4)…” (Source: SK Hynix Press release )
Micron: “We are also the first supplier to sample low-power DDR4 to our customers and chipset partners.” (Source: Micron Earnings Call Transcript )
Who was actually first? We may never know…
Graham Allan is the Sr. Product Marketing Manager for DDR PHYs at Synopsys. Graham graduated from Carleton University's Electrical Engineering program with a passion for electronics that landed him in the field of DRAM design at Mosaid in Ottawa, Canada. Beginning at the 64Kb capacity, Graham worked on DRAM designs through to the 256Mb generation. Starting in 1992, Graham was a key contributor to the JEDEC standards for SDRAM, DDR SDRAM and DDR3 SDRAM. Graham holds over 20 patents in the field of DRAM and memory design.