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 This blog discusses all things related to mixed-signal PHY IP such as the latest trends, design challenges and anything that may be controversial.  I built my first crystal radio at about the age of ten (had help with the soldering iron) and have been dabbling in the analog electronics field ever since. The "James Brown of Analog": I do like James Brown and have I been working in the electronics industry for many years. I’m also a big fan of Reggae and Ska and spent my youth listening to John Peel on Radio 1. Ken Boothe is the greatest singer. Running is a passion. Squaw Valley is the best place to ski. Ever! - Navraj Nandra
Archive for the 'USB' Category
Posted by Navraj Nandra on 15th March 2012
Synopsys’ user group (SNUG) attracts about 3000 engineers over the three day event in San Jose. This year we will repeat the very successful “IP Summit” – a day devoted to designers and technology leaders. Topics relevent to today’s design challenges and expert opinions on future directions will be presented in a 60 to 90 minute tutorial format:
- Best practices on implementing memories and libraries
- Designing PCIe 3.0 Express
- RFID tagging technology
- Meeting quality of service for DDR controllers
- Creating an Audio IP subsystem
- Using synthesis tools to improve datapath quality of results
- Integrating USB 3.0
- Integrating MIPI
-The Role of IP in More Moore and More than Moore
Also TMSC’s Dr. Suk Lee will present “The Impact of Process Migration on IP Design” key note, over lunch.
You’ll have the opportunity to hear from industry experts, ask questions and of course network.
Looking forward to seeing you there.
When: Wednesday March 28
Where: Santa Clara Convention Center
More details: : http://www.synopsys.com/IP/Pages/IPSummit2012.aspx

Posted in An analog designer speaks!, DDR, General - mixed-signal IP, NVM, PCI Express, SATA, USB | 2 Comments »
Posted by Navraj Nandra on 12th March 2012
USB is one of those interfaces that you cannot live without. Charging your mobile device or transferring photos, music, powerpoint slides (usually in my case just before an important meeting) is the role of USB. It is the workhorse. It delivers. As files get bigger –  I heard about the Nokia phone that has a 41 megapixel camera http://abcn.ws/xXPiCp - about four times the resolution of my really good camera, the need for a faster USB to transfer these megapixel photos becomes necessary. USB 3.0 is that technology – tens times faster than your current USB. So over the last couple to three years there was lots of talk about USB 3.0 – and finally it happened http://bit.ly/zf99yw .
But what about the previous USB 2.0 generation? In many cases this still is the primary interface in consumer devices and our development and marketing teams at Synopsys have been busy in improving the power, performance and area in the latest 28-nm and 20-nm technologies. In terms of an ecosystem, compliance and interoperability requirements (remember this interface HAS to work), the USB implementers’ forum upped the ante and now require all new USB 2.0 products to demonstrate successful interoperability with various USB 3.0 hosts. This evolution in the USB 2.0 Hi-Speed logo certification process from requiring successful tests with various USB 2.0 hosts to USB 2.0 and USB 3.0 hosts now just shows how important interoperability with USB 3.0 is becoming.
And it’s becoming more and more mobile oriented…
We call our product USB 2.0 picoPHY. The new features increase battery life and speed recharging in next generation mobile designs, such as smart phones and tablets. Also included is support for  the USB Battery Charger v1.2 standard and addition of low-power features such as aggressive power supply collapsing with high voltage interrupt signaling, and reduced core voltage in suspend mode.
So USB 3.0 is the future but there is plenty of innovation in USB 2.0 left.
 Synopsys USB 2.0 test-chips
 Silicon results in 28-nm and USB IF certification
Posted in An analog designer speaks!, General - mixed-signal IP, Low Power, Low Power - Analog Designer's Guide, Uncategorized, USB | No Comments »
Posted by Navraj Nandra on 3rd March 2012
In preparing for the Synopsys Users Group (SNUG) tutorial on “The Role of IP in More Moore and More than Moore”, I had to present the “dry run” yesterday to my colleagues. So this is what I’m presenting. Known as “more Moore”, high-k metal gate dielectrics, double patterning and finFET’s have extended Moore’s law to 14-nm. Targeting the next generation application processors for tablets and super smart phones, the benefits are performance, lower power and area. Typically at 65-nm and above, “More than Moore” – innovation occurs with integrated sensors and near field communication technologies in applications such as smart-posters and radio frequency identification. In both cases IP is required but has a different design requirement. Innovations such as 3D are also occurring. A detailed technical review of these technology innovations, the design and implementation challenges for analog and physical IP will be presented. I’ll be giving this tutorial on March  28th at  3pm at the Santa Clara Convention Center.
 More Moore and More than Moore Technologies
Posted in An analog designer speaks!, Data Converters, DDR, General - mixed-signal IP, HDMI, Low Power, Low Power - Analog Designer's Guide, NVM, PCI Express, SATA, USB | 4 Comments »
Posted by Navraj Nandra on 17th October 2011
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Tomorrow I’ll be presenting at TSMC’s OIP (Open Innovation Program) on a topic regarding high performance analog and interface IP that is used in the latest smart phones, tablets and also the data centers. The idea of the talk was triggered by an article that I read about how the theoretical limit of Shannon’s Law is being reached and that Moore’s Law can be used to extend this bandwidth limit. What I’m presenting is that using the latest 28 nm and 20 nm technologies high performance analog and interface IP can be developed that can extend Shannon’s theoretical limit. If you cannot attend the talk, here’s the summary.
 Extending Shannon's Limit?
What’s causing this bandwidth limit?
Mobile multimedia products such as smartphones and tablets are driving huge bandwidth requirements into the data centers. A rough order magnitude states that one server in the data center is needed to handle the traffic from every 600 smartphones or 122 tablets. By 2015, it is projected that 7.1 billion phones and tablets, will be sending 75 exabytes (one billion gigabytes) of internet traffic. To address these bandwidth limits, Moore’s Law is driving innovation at the system-on-chip (SoC) level with quad-core CPU’s running in excess of 1.5 GHz in 28 nm. In order to get data on and off the SoC, from the application processor to the base-band chip, high performance interfaces are used. Since the design and implementation challenges are significantly greater at 28 nm and below, SoC development teams are looking for ways to meet aggressive product cycles by implementing third party intellectual property (IP) for these interfaces.Â
28-nm, 20-nm technology and IP
Being a consumer driven market, cost is a major factor for mobile multimedia products and SoC companies are using economies of scale afforded by 28 nm integration levels to build media processors to fit multiple personal computer and consumer electronic platforms. The interface IP needs include multi-port USB 2.0, USB 3.0, HSIC (high-speed inter-chip) which is derived from the USB protocol, PCI Express Gen. 1, SATA, HDMI Tx (to connect to high definition displays), MIPI CSI/DSI for camera and displays interfaces, Gigabit Ethernet and SD 4.0. Also, smartphone storage will exceed 100 GB in 2012 and this will require both throughput and capacity: USB “sync-n-go”, micro-USB, potentially UFS (universal flash storage) are likely candidates for this type of interface IP. The DRAM bandwidth is growing faster than any market segment: mDDR (mobile DDR) is being replaced by LPDDR2 this year. Audio codec’s and general purpose data converter IPs are also required. The low power variant of 28 nm technology (the POLYSION based LP, or the HKMG HPL) is the preferred choice with a 1.8 V gate oxide. Other important requirements include special power down modes.
On the other end, data centers or cloud computing is driving high-end IP requirements in 28HPM or 28HP processes. The data center backbone will use the 8 Gb/s PCIe 3.0 switches and these are used to connect to multi-channel 10 Gb Ethernet HBA (host bus adapters). The high-speed DDR3 memory interfaces are expected to operate at 2133 Mb/s supporting both RDIMM and LRDIMM – and these will eventually move to DDR4 2013.
How does TSMC’s OIP help in all of this?
TSMC’s Open Innovation Program (OIP) is an integral part of the collaboration between Synopsys and TSMC. For analog/mixed-signal IP this means access to early versions of design kits help reduce the adoption barrier for customers implementing next-generation SoC designs in the advanced process technologies. By providing IP that meets the rigorous TSMC9000 certification standards, Synopsys and TSMC are enabling our mutual customers to reduce integration risk and system cost, while quickly ramping up into volume production
Posted in An analog designer speaks!, Data Converters, DDR, General - mixed-signal IP, HDMI, Low Power, Low Power - Analog Designer's Guide, PCI Express, SATA, USB | 1 Comment »
Posted by Navraj Nandra on 13th October 2010
Flicking through an in-flight magazine this evening, my eye caught an ad with the title “Good-bye Sluggomorbus – Hello SuperSpeed USB” – it so happened I was on my way to a customer meeting to discuss – yes you got it – USB 3.0.
So the ad goes…”Sluggomorbus strikes when slow transfer rates make you wait for photos to upload…..symptoms include falling asleep, obscene gestures…”
Actually my meeting was to discuss the key considerations of integrating the USB 3.0 PHY into the customer’s chip, a topic that my readers would be interested in too. So here goes… If you are thinking about USB 3.0 PHY integration the following decisions need to be made:
- Legacy support model
- Reference clock source selection
- Process/packaging technology selection
- Power-down requirements (what happens when the cable is NOT attached)
- Test & debug strategy
The key to understand the first bullet point is that USB 3.0 requires a new cable, basically 5 extra wires with differential receive and transmit pairs. The new SuperSpeed mode operates ten times faster than USB 2.0 – at an impressive 5Gb/s. This also requires simultaneous transmit and receive because USB 2.0 is bidirectional and this is where the legacy support comes into play. USB 3.0 must support 480 Mb/s high speed and full speed operation. Some customers think that using their existing USB 2.0 PHY & simply adding a SuperSpeed PHY, simplistically a 5 Gb/s SERDES, is a low risk solution to get to a complete backwardly compatible USB 3.0 implementation.
Not so.
With a completely integrated solution both the SuperSpeed and the USB 2.0 PHY’s come together as a single block. When done right this means that only a single input reference clock, a single external calibration resistor and a single USB 3.0 controller (link layer) is needed. This will handle all four speed modes of USB 3.0 from SuperSpeed to low speed. Also as I explained to the customer, Synopsys passed USB 3.0 compliance with our PHY’s and controllers and we offer a hardware validation platform of the entire solution using the Synplicity HAPS system.
So the only obscene gestures potentially come from a customer trying to figure out how to integrate the USB 3.0 5 Gb/s portion with the USB 2.0 PHY by themselves.Â
Posted in USB | 1 Comment »
Posted by Navraj Nandra on 27th April 2010
With some of our USB 3.0 development team, we attended the 20th annual EDN innovation awards ceremony in San Jose. In order to develop this award winning product we blended the expertise of USB and SERDES, PHY and controller teams, located worldwide, combining USB 2.0 and the emerging USB 3.0  to yield fully functional first silicon using a wire-bond package. That’s right 5 Gb/s through wirebond.
This solution passed all of the USB 2.0 and USB 3.0 interoperable test suites, as well as the electrical tests for both 480-Mb/s and 5-Gb/s operational modes. Resulting in a complete solution, optimized for cost, area, power and functionality—for example, requiring only a single external reference clock input and single external calibration resistor that are shared between the two operational modes.
Kudos to our development team as they are spread across the globe in six locations: Hillsboro, OR; Toronto and Ottawa, Canada; Mt View, CA; India; and Armenia.
 Some of our USB 3.0 development team at the EDN awards ceremony
Posted in USB | 1 Comment »
Posted by Navraj Nandra on 2nd April 2010
As Jeff Ravencraft puts it “Passing certification is important as it demonstrates that the IP (intellectual property) meets USB-IF interoperability standards and is compliant to the USB 3.0 specification”. And being the president and chairman of the USB Implementers Forum, he should know.
What certification tells you is that the USB 3.0 (or any standards based IP) passed protocol, electrical, and interoperability tests for both SuperSpeed (5 Gb/s) and Hi-Speed 480 Mbps modes. What this means is that you can take the certified USB 3.0 IP and integrate into your 65-nm or 40-nm SoC, comfortable in the knowledge that it will support both USB 3.0 and USB 2.0 speeds.
To get to the certification, or as the title of this post has it “What’s behind certification”, is a thorough verification methodology that ensures functional correctness.
For the physical layer (PHY) of the USB 3.0 in 65-nm or 40-nm, pre-layout verification in terms of device mismatch and Monte Carlo simulations is becoming a poor predictor of performance. This increases the importance of post-layout parasitic extracted simulations due to the systematic variations based on physical changes to the device. Variation due to device size is well understood and Monte Carlo simulations can be extensively used to evaluate the impact of threshold voltage and saturated drain current mismatch.
However, systematic variations based on physical changes to the device can occur during manufacturing, which can include shallow trench isolation (STI) stress, well proximity, optical proximity and phase shift effects (OPC/PSM); and, the time dependent variation – hot carrier injection (HCI). The new methodologies including post-layout verification need to include all the above factors. Also, at these high speeds, there are additional factors to consider in post-layout verification phase, such as package models assuming a worst-case or pessimistic environment and primary and secondary ESD protections.
With high-speed serial interconnects manufactured in 65-nm and 40-nm technologies, test-chips and silicon characterization are integral to the validation methodology. In order to ensure manufacturing robustness, test-chips must be processed using split-matrix lots where critical parameters such as threshold voltage and mobility are varied. Special testing equipment, including high-speed oscilloscopes, data generators, bit-error rate testers, and compliance test sets are traditionally used to verify the quality of the electrical signaling. These will measure the eye-diagram, jitter generation, jitter tolerance, and other electrical parameters necessary for USB 3.0 certification. The challenge is that bandwidths required to accurately measure the high-speed serial links (in the case of USB 3.0) may not be possible with today’s test equipment, or it becomes very expensive in terms of equipment cost, calibration and set-up.
To address this, the new silicon validation methodologies include having direct visibility into the received eye of the high-speed serial interconnect, without using any special testing equipment to show the link performance. This allows the user to measure the actual eye at the receiver and eliminates the need for expensive test equipment and hardware with SMA connectors to measure a link in the lab or in the field.
In addition, the impact of transmitter pre-emphasis and receiver equalization can be evaluated, which provides additional information on link frequency when used in asynchronous system. Validation at the system level and for board fault analysis, IEEE-1149.6 AC JTAG support should also included in this methodology.
So to finish up on Jeff’s comment:
“Certification of IP building blocks is an important step in the evolution of SuperSpeed USB technology, it assures designers that the solution interoperates with existing USB products while providing the speed and power benefits that SuperSpeed USB offers.”
More information can be found on:
http://synopsys.mediaroom.com/index.php?s=43&item=788
Posted in An analog designer speaks!, General - mixed-signal IP, USB | No Comments »
Posted by Navraj Nandra on 10th January 2010
Seventeen USB 3.0 enabled products were announced at the Consumer Electronics show (CES) this week in Las Vegas. Named “SuperSpeed” for the 10x speed increase, these products included ASUS and Giga-Byte Technology motherboards, HP and Fujitsu notebook PC’s, internal and external hard disk drives, USB 3.0 to PCI Express add-in cards and USB 3.0 to SATA storage controllers. Many more consumer products and silicon devices benefitting from the 10X speed increase over USB 2.0 are expected to be announced this year.
At the this year’s CES, one of Synopsys’ USB 3.0 and HDMI customers, Displaylink demonstrated how the speed of USB 3.0 enables flawless transmission of uncompressed 1080P high definition video and 3D gaming over USB.Â
  
Above is the tabletop demo showing a USB 3.0 Host PC connected to a Buffalo brand USB 3.0 external hard drive and FPGA board containing Displaylink’s proprietary display technology and USB 3.0 and HDMI connections. Residing next to the blue USB 3.0 cable is a black HDMI cable connected to a 42 inch 1080P Samsung LED LCD. A variety of high definition movies and display examples were displayed on the LCD TV.
Posted in An analog designer speaks!, General - mixed-signal IP, USB | No Comments »
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